Resolution of Damaged Metallization on Highly Complex Semiconductor Device
Journal of Engineering Research and Reports,
Page 7-12
DOI:
10.9734/jerr/2020/v16i317167
Abstract
The paper focused on the resolution of damaged metallization during assembly process that lead to gross open-short (O/S) rejections during functional testing of a highly complex semiconductor package. Numerous batches were put on hold due to not meeting the specification assigned for the short contact test. Design of experiments (DOE) on assembly processes were conducted and eventually identified the reject as an electrostatic discharge (ESD) related failure. Corrective actions and ESD controls significantly reduced the occurrence of damaged metallization with around 85% reduction.
Keywords:
- Metallization
- semiconductor
- ESD
- assembly
How to Cite
References
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