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Resolution of Damaged Metallization on Highly Complex Semiconductor Device

  • Antonio Sumagpang Jr.
  • Frederick Ray Gomez

Journal of Engineering Research and Reports, Page 7-12
DOI: 10.9734/jerr/2020/v16i317167
Published: 31 August 2020

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Abstract


The paper focused on the resolution of damaged metallization during assembly process that lead to gross open-short (O/S) rejections during functional testing of a highly complex semiconductor package. Numerous batches were put on hold due to not meeting the specification assigned for the short contact test. Design of experiments (DOE) on assembly processes were conducted and eventually identified the reject as an electrostatic discharge (ESD) related failure. Corrective actions and ESD controls significantly reduced the occurrence of damaged metallization with around 85% reduction.


Keywords:
  • Metallization
  • semiconductor
  • ESD
  • assembly
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  • Review History

How to Cite

Sumagpang Jr., A., & Gomez, F. R. (2020). Resolution of Damaged Metallization on Highly Complex Semiconductor Device. Journal of Engineering Research and Reports, 16(3), 7-12. https://doi.org/10.9734/jerr/2020/v16i317167
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References

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Sumagpang Jr. A, Gomez FR. A methodical approach in critical processes optimization of new scalable package semiconductor device for ESD applications. Asian Journal of Engineering and Technology. 2018;6(6):78-87.

Pulido J, Gomez FR, Graycochea Jr. E. Lead scratch resolution through wirebonding process optimization on qfn packages. Journal of Engineering Research and Reports. 2020;15(1):29-33.

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