Design of Common-Source/Drain Active Balun Using 90nm CMOS Technology

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Frederick Ray I. Gomez
Maria Theresa G. De Leon
John Richard E. Hizon

Abstract

This research paper presents a design and study of a common-source/drain active balun circuit implemented in a standard 90-nm complementary metal-oxide semiconductor (CMOS) technology.  The active balun design is intended for worldwide interoperability for microwave access (WiMAX) application, with operating frequency of 5.8GHz and supply voltage of 1V.  Measurements are taken for parameters namely gain difference, phase difference, and noise figure.  The common-source active balun design achieved a minimal gain difference of 0.016dB, phase difference of 180° ± 7.1°, and noise figure of 7.42-9.85dB, which are comparable to past active balun designs and researches.  The design eventually achieved a low power consumption of 2.56mW.

Keywords:
Common-source/drain active balun, 90nm CMOS, balun, gain, gain difference, phase difference, noise figure, WiMAX

Article Details

How to Cite
Gomez, F., Leon, M., & Hizon, J. (2019). Design of Common-Source/Drain Active Balun Using 90nm CMOS Technology. Journal of Engineering Research and Reports, 4(3), 1-9. https://doi.org/10.9734/jerr/2019/v4i316906
Section
Original Research Article